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agilent atf-55143 low noise enhancement mode pseudomorphic hemt in a surface mount plastic package data sheet description agilent technologies? atf-55143 is a high dynamic range, very low noise, single supply e-phemt housed in a 4-lead sc-70 (sot-343) surface mount plastic package. the combination of high gain, high linearity and low noise makes the atf-55143 ideal for cellular/pcs handsets, wireless data systems (wll/rll, wlan and mmds) and other systems in the 450 mhz to 6 ghz frequency range. features high linearity performance single supply enhancement mode technology [1] very low noise figure excellent uniformity in product specifications 400 micron gate width low cost surface mount small plastic package sot-343 (4 lead sc-70) tape-and-reel packaging option available specifications 2 ghz; 2.7v, 10 ma (typ.) 24.2 dbm output 3 rd order intercept 14.4 dbm output power at 1 db gain compression 0.6 db noise figure 17.7 db associated gain applications low noise amplifier for cellular/ pcs handsets lna for wlan, wll/rll and mmds applications general purpose discrete e-phemt for other ultra low noise applications note: 1. enhancement mode technology requires positive vgs, thereby eliminating the need for the negative gate voltage associated with conventional depletion mode devices. surface mount package sot-343 pin connections and package marking source drain gate source 5fx note: top view. package marking provides orientation and identification ?f? = device code ?? = date code character identifies month of manufacture.
atf-55143 absolute maximum rating s [1] absolute symbol parameter units maximum v ds drain-source voltage [2] v5 v gs gate-source voltage [2] v -5 to 1 v gd gate drain voltage [2] v5 i ds drain current [2] ma 100 i gs gate current [5] ma 1 p diss total power dissipation [3] mw 270 p in max. rf input power [5] dbm 7 t ch channel temperature c 150 t stg storage temperature c -65 to 150 q jc thermal resistance [4] c/w 235 esd (human body model) v 200 esd (machine model) v 25 notes: 1. operation of this device above any one of these parameters may cause permanent damage. 2. assumes dc quiescent conditions. 3. source lead temperature is 25 c. derate 4.3 mw/ c for t l > 87 c. 4. thermal resistance measured using 150 c liquid crystal measurement method. 5. device can safely handle +3 dbm rf input power as long as i gs is limited to 1 ma. i gs at p 1db drive level is bias circuit dependent. see applications section for additional information. product consistency distribution charts [6, 7] v ds (v) figure 1. typical i-v curves. (v gs = 0.1 v per step) i ds (ma) 0.4 v 0.3v 0.5 v 0.6 v 0.7 v 02 146 5 37 70 60 50 40 30 20 10 0 oip3 (dbm) figure 2. oip3 @ 2.7 v, 10 ma. lsl = 22.0, nominal = 24.2 22 23 25 24 26 300 250 200 150 100 50 0 cpk = 2.02 stdev = 0.36 -3 std gain (db) figure 3. gain @ 2.7 v, 10 ma. usl = 18.5, lsl = 15.5, nominal = 17.7 15 17 16 18 19 200 160 120 80 40 0 cpk = 1.023 stdev = 0.28 -3 std +3 std nf (db) figure 4. nf @ 2.7 v, 10 ma. usl = 0.9, nominal = 0.6 0.43 0.63 0.53 0.83 0.73 0.93 240 200 160 120 80 40 0 cpk = 3.64 stdev = 0.031 +3 std notes: 6. between the upper and lower limits. 7. production test equipment. circuit losses have been de-embedded from actual measurements. distribution data sample size is 500 samples taken from 6 different wafers. future wafers allocated to this product may have no minal values anywhere measurements made on production test board. this circuit represents a trade-off between an optimal noise match and a realizeabl e match based on
atf-55143 electrical specifications t a = 25 c, rf parameters measured in a test circuit for a typical device symbol parameter and test condition units min. typ. [2] max. vgs vds = 2.7v, ids = 10 ma v 0.3 0.47 0.65 vth threshold voltage vds = 2.7v, ids = 2 ma v 0.18 0.37 0.53 idss saturated drain current vds = 2.7v, vgs = 0v m a 0.1 3 gm transconductance vds = 2.7v, gm = d idss/ d vgs; mmho 110 220 285 d vgs = 0.75 0.7 = 0.05v igss gate leakage current vgd = vgs = -2.7v m a95 nf noise figure [1] f = 2 ghz vds = 2.7v, ids = 10 ma db 0.6 0.9 f = 900 mhz vds = 2.7v, ids = 10 ma db 0.3 ga associated gain [1] f = 2 ghz vds = 2.7v, ids = 10 ma db 15.5 17.7 18.5 f = 900 mhz vds = 2.7v, ids = 10 ma db 21.6 oip3 output 3 rd order f = 2 ghz vds = 2.7v, ids = 10 ma dbm 22.0 24.2 intercept point [1] f = 900 mhz vds = 2.7v, ids = 10 ma dbm 22.3 p1db 1db compressed f = 2 ghz vds = 2.7v, ids = 10 ma dbm 14.4 output power [1] f = 900 mhz vds = 2.7v, ids = 10 ma dbm 14.2 notes: 1. measurements obtained using production test board described in figure 5. 2. typical values determined from a sample size of 500 parts from 6 wafers. input 50 ohm transmission line including gate bias t (0.3 db loss) input matching circuit g _mag = 0.4 g _ang = 83 (0.3 db loss) output matching circuit g _mag = 0.5 g _ang = -26 (1.2 db loss) dut 50 ohm transmission line including drain bias t (0.3 db loss) output figure 5. block diagram of 2 ghz production test board used for noise figure, associated gain, p1db, oip3, and iip3 measuremen ts. this circuit represents a trade-off between an optimal noise match, maximum oip3 match and associated impedance matching circuit losses. cir cuit losses have been de-embedded from actual measurements. operational gate voltage
atf-55143 typical performance curves figure 6. gain vs. bias over frequency. [1] frequency (ghz) gain (db) 0123456 0123456 0123456 30 25 20 15 10 5 2v, 10 ma 2.7v, 10 ma figure 8. oip3 vs. bias over frequency. [1] frequency (ghz) oip3 (dbm) 2v, 10 ma 2.7v, 10 ma 27 25 23 21 19 17 15 figure 9. iip3 vs. bias over frequency. [1] frequency (ghz) iip3 (dbm) 2v, 10 ma 2.7v, 10 ma 15 10 5 0 -5 figure 10. p1db vs. bias over frequency. [1,2] frequency (ghz) p1db (dbm) 2v, 10 ma 2.7v, 10 ma 16 14 12 10 8 figure 11. gain vs. i ds and v ds at 2 ghz. [1] 2v 2.7v 3v i ds (ma) gain (db) 21 20 19 18 17 16 15 figure 13. oip3 vs. i ds and v ds at 2 ghz. [1] i ds (ma) oip3 (dbm) 35 33 31 29 27 25 23 21 19 2v 2.7v 3v figure 14. iip3 vs. i ds and v ds at 2 ghz. [1] i ds (ma) iip3 (dbm) 035 16 14 12 10 8 6 4 2 0 2v 2.7v 3v 10 5202530 15 figure 7. fmin vs. frequency and bias. frequency (ghz) fmin (db) 2v, 10 ma 2.7v, 10 ma 1.2 1.0 0.8 0.6 0.4 0.2 0 figure 12. fmin vs. i ds and v ds at 2 ghz. i ds (ma) fmin (db) 0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 2v 2.7v 3v notes: 1. measurements at 2 ghz were made on a fixed tuned production test board that was tuned for optimal oip3 match with reasonable noise figure at 2.7 v, 10 ma bias. this circuit represents a trade-off between optimal noise match, maximum oip3 match and a realizable match based on production test board requirements. measurements taken above and below 2 ghz were made using a double stub tuner at the input tuned for low noise and a double stub tuner at the output tuned for maximum oip3. circuit losses have been de-embedded from actual measurements. 2. p1db measurements are performed with passive biasing. quiescent drain current, i dsq , is set with zero rf drive applied. as p1db is approached, the drain current may increase or decrease depending on frequency and dc bias point. at lower values of i dsq , the device is running close to class b as power output approaches p1db. this results in higher p1db and higher pae (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. as an example, at a v ds = 2.7v and i dsq = 5 ma, i d increases to 15ma as a p1db of +14.5 dbm is approached. 0 1 2 3 4 5 6 0 1 2 3 4 5 6 0 5 10 15 20 25 30 35 035 10 5202530 15 035 10 5202530 15
atf-55143 typical performance curves , continued figure 15. p1db vs. i dsq and v ds at 2 ghz. [1,2] i dsq (ma) p1db (dbm) 2v 2.7v 3v 17 16 15 14 13 12 11 10 figure 16. gain vs. i ds and v ds at 900 mhz. [1] i ds (ma) gain (db) 2v 2.7v 3v 25 24 23 22 21 20 19 18 figure 18. oip3 vs. i ds and v ds at 900 mhz. [1] i ds (ma) oip3 (dbm) 32 30 28 26 24 22 20 18 16 2v 2.7v 3v figure 19. iip3 vs. i ds and v ds at 900 mhz. [1] i ds (ma) iip3 (dbm) 7 6 5 4 3 2 1 0 -1 -2 2v 2.7v 3v figure 20. p1db vs. i dsq and v ds at 900 mhz. [1,2] i dsq (ma) p1db (dbm) 17 16 15 14 13 12 11 10 9 2v 2.7v 3v figure 17. fmin vs. i ds and v ds at 900 mhz. i ds (ma) fmin (db) 2v 2.7v 3v 0.35 0.30 0.25 0.20 0.15 0.10 notes: 1. measurements at 2 ghz were made on a fixed tuned production test board that was tuned for optimal oip3 match with reasonable noise figure at 2.7 v, 10 ma bias. this circuit represents a trade-off between optimal noise match, maximum oip3 match and a realizable match based on production test board requirements. measurements taken above and below 2 ghz were made using a double stub tuner at the input tuned for low noise and a double stub tuner at the output tuned for maximum oip3. circuit losses have been de-embedded from actual measurements. 2. p1db measurements are performed with passive biasing. quiescent drain current, i dsq , is set with zero rf drive applied. as p1db is approached, the drain current may increase or decrease depending on frequency and dc bias point. at lower values of i dsq , the device is running close to class b as power output approaches p1db. this results in higher p1db and higher pae (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. as an example, at a v ds = 2.7v and i dsq = 5 ma, i d increases to 15 ma as a p1db of +14.5 dbm is approached. 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35
atf-55143 typical performance curves , continued iip3 (dbm) figure 21. gain vs. temperature and frequency with bias at 2.7v, 10 ma. [1] frequency (ghz) gain (db) 06 2 145 3 28 23 18 13 8 25 c -40 c 85 c figure 23. oip3 vs. temperature and frequency with bias at 2.7v, 10 ma. [1] frequency (ghz) oip3 (dbm) 25 c -40 c 85 c 25 24 23 22 21 20 19 figure 24. iip3 vs. temperature and frequency with bias at 2.7v, 10 ma. [1] frequency (ghz) 25 c -40 c 85 c 16 14 12 10 8 6 4 2 0 -2 -4 -6 figure 25. p1db vs. temperature and frequency with bias at 2.7v, 10 ma. [1,2] frequency (ghz) p1db (dbm) 25 c -40 c 85 c 16 15 14 13 12 11 10 figure 22. fmin vs. frequency and temperature at 2.7v, 10 ma. frequency (ghz) fmin (db) 2.0 1.5 1.0 0.5 0 25 c -40 c 85 c notes: 1. measurements at 2 ghz were made on a fixed tuned production test board that was tuned for optimal oip3 match with reasonable noise figure at 2.7 v, 10 ma bias. this circuit represents a trade-off between optimal noise match, maximum oip3 match and a realizable match based on production test board requirements. measurements taken above and below 2 ghz were made using a double stub tuner at the input tuned for low noise and a double stub tuner at the output tuned for maximum oip3. circuit losses have been de-embedded from actual measurements. 2. p1db measurements are performed with passive biasing. quiescent drain current, i dsq , is set with zero rf drive applied. as p1db is approached, the drain current may increase or decrease depending on frequency and dc bias point. at lower values of i dsq , the device is running close to class b as power output approaches p1db. this results in higher p1db and higher pae (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. as an example, at a v ds = 2.7v and i dsq = 5 ma, i d increases to 15 ma as a p1db of +14.5 dbm is approached. 06 2 145 30 6 2 145 3 06 2 145 30 6 2 145 3
atf-55143 typical scattering parameters, v ds = 2v, i ds = 10 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. mag. ang. mag. ang. db 0.1 0.998 -6.5 20.78 10.941 174.9 0.006 86.1 0.796 -4.2 32.61 0.5 0.963 -31.7 20.37 10.434 154.8 0.029 70.2 0.762 -20.4 25.56 0.9 0.894 -54.7 19.57 9.516 137.1 0.048 56.9 0.711 -34.4 22.97 1.0 0.879 -60.1 19.32 9.252 133.0 0.051 54 0.693 -37.3 22.59 1.5 0.793 -84.1 18.07 8.009 115.2 0.066 41.5 0.622 -49.6 20.84 1.9 0.731 -100.8 17.11 7.166 102.8 0.075 33.6 0.570 -57.1 19.80 2.0 0.718 -104.7 16.86 6.970 100.1 0.077 31.8 0.559 -58.7 19.57 2.5 0.657 -123.7 15.79 6.159 86.6 0.084 23.7 0.503 -66.3 18.65 3.0 0.611 -141.8 14.80 5.494 74.2 0.090 16.5 0.446 -73 17.86 4.0 0.561 -177.5 13.10 4.517 51.0 0.098 3.6 0.343 -87.6 16.64 5.0 0.558 149.4 11.52 3.768 29.3 0.102 -8.3 0.269 -104.4 15.68 6.0 0.566 122.5 10.06 3.183 9.4 0.104 -18.4 0.224 -120.4 10.94 7.0 0.583 99.7 8.78 2.748 -9.2 0.106 -28.5 0.189 -137.3 9.33 8.0 0.601 77.7 7.62 2.404 -27.4 0.105 -38.4 0.140 -149.3 8.14 9.0 0.636 57.5 6.63 2.147 -45.3 0.110 -44.7 0.084 -170 7.72 10.0 0.708 38.3 5.66 1.919 -64.6 0.117 -56.6 0.08 109.3 8.03 11.0 0.76 21.8 4.45 1.670 -83.1 0.119 -68.2 0.151 64.5 7.90 12.0 0.794 7.6 3.32 1.465 -100.2 0.121 -79.3 0.217 40.8 7.66 13.0 0.819 -7.8 2.29 1.302 -117.9 0.121 -91.4 0.262 20.8 7.36 14.0 0.839 -23.6 1.27 1.157 -136.7 0.122 -104.4 0.327 0.5 7.05 15.0 0.862 -37.9 -0.19 0.978 -155.2 0.115 -117.7 0.431 -16.4 6.52 16.0 0.853 -51.0 -1.83 0.810 -171.8 0.109 -129.4 0.522 -28.6 5.22 17.0 0.868 -60.1 -3.25 0.688 173.9 0.107 -139.9 0.588 -41.6 4.90 18.0 0.911 -70.3 -4.44 0.601 158.5 0.102 -153.2 0.641 -55.8 5.94 freq f min g opt g opt r n/50 g a ghz db mag. ang. db 0.5 0.21 0.65 17.5 0.13 24.84 0.9 0.26 0.60 22.6 0.12 22.86 1.0 0.27 0.55 27.0 0.12 22.39 1.9 0.42 0.55 49.4 0.11 18.77 2.0 0.43 0.54 51.7 0.11 18.42 2.4 0.50 0.45 61.5 0.10 17.14 3.0 0.59 0.40 78.1 0.09 15.50 3.9 0.73 0.26 111.9 0.07 13.62 5.0 0.92 0.21 172.5 0.06 12.05 5.8 1.04 0.24 -151.5 0.07 11.28 6.0 1.06 0.23 -144.5 0.08 11.12 7.0 1.22 0.28 -107.1 0.14 10.45 8.0 1.42 0.33 -75.5 0.24 9.84 9.0 1.57 0.43 -51.5 0.38 9.10 10.0 1.71 0.54 -33.3 0.57 8.03 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test system. from these measurements f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diamet er via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. typical noise parameters, v ds = 2v, i ds = 10 ma figure 26. msg/mag and |s 21 | 2 vs. frequency at 2v, 10 ma. msg |s 21 | 2 frequency (ghz) msg/mag and |s 21 | 2 (db) 020 10 515 35 30 25 20 15 10 5 0 -5 -10
atf-55143 typical scattering parameters, v ds = 2v, i ds = 15 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. mag. ang. mag. ang. db 0.1 0.997 -7.1 22.33 13.074 174.4 0.006 85.7 0.752 -4.6 33.38 0.5 0.953 -34.5 21.82 12.333 153.0 0.027 69.4 0.712 -22.1 26.60 0.9 0.873 -58.8 20.86 11.042 134.4 0.044 56.3 0.654 -36.7 24.00 1.0 0.856 -64.6 20.58 10.693 130.3 0.047 53.3 0.636 -39.6 23.57 1.5 0.759 -89.3 19.14 9.059 112.2 0.060 41.6 0.560 -51.8 21.79 1.9 0.695 -106.2 18.06 7.998 100.0 0.068 34.4 0.509 -59.0 20.70 2.0 0.681 -110.2 17.8 7.762 97.2 0.070 32.8 0.498 -60.5 20.45 2.5 0.621 -129.3 16.62 6.773 83.9 0.076 25.6 0.443 -67.5 19.50 3.0 0.578 -147.4 15.54 5.985 71.8 0.082 19.4 0.390 -73.6 18.63 4.0 0.536 177.3 13.71 4.850 49.4 0.091 7.9 0.295 -87.3 17.27 5.0 0.541 145.1 12.09 4.020 28.4 0.096 -3.0 0.225 -104.3 16.22 6.0 0.554 119.1 10.59 3.384 9.0 0.101 -12.7 0.183 -120.8 10.47 7.0 0.574 97.0 9.3 2.917 -9.1 0.105 -23.0 0.150 -138.4 9.34 8.0 0.594 75.5 8.13 2.549 -27.0 0.106 -33.1 0.101 -149.7 8.32 9.0 0.63 55.9 7.12 2.271 -44.6 0.113 -40.4 0.047 -175.2 7.99 10.0 0.703 37.3 6.14 2.028 -63.5 0.121 -53.2 0.078 82.0 8.33 11.0 0.757 21.1 4.92 1.762 -81.7 0.123 -65.3 0.162 51.1 8.19 12.0 0.793 7.1 3.79 1.547 -98.5 0.125 -76.9 0.231 31.3 7.98 13.0 0.818 -8.2 2.77 1.376 -115.9 0.125 -89.5 0.275 12.8 7.68 14.0 0.841 -23.8 1.76 1.225 -134.3 0.125 -102.7 0.339 -5.5 7.43 15.0 0.863 -38.1 0.32 1.038 -152.5 0.118 -116.3 0.438 -21.0 6.85 16.0 0.856 -51.2 -1.29 0.862 -168.8 0.111 -128.0 0.524 -32.0 5.58 17.0 0.871 -60.2 -2.66 0.736 177.0 0.109 -138.6 0.586 -44.4 5.27 18.0 0.913 -70.4 -3.8 0.646 161.7 0.105 -151.9 0.636 -58.1 6.28 freq f min g opt g opt r n/50 g a ghz db mag. ang. db 0.5 0.21 0.627 18.7 0.1 25.41 0.9 0.25 0.56 23.6 0.1 23.47 1.0 0.26 0.53 27.3 0.1 23.02 1.9 0.4 0.51 49.7 0.09 19.44 2.0 0.41 0.5 52.6 0.09 19.09 2.4 0.48 0.41 62.3 0.09 17.81 3.0 0.57 0.35 80.4 0.08 16.17 3.9 0.7 0.22 118.4 0.06 14.25 5.0 0.86 0.2 -176.5 0.06 12.6 5.8 0.99 0.23 -140.5 0.08 11.77 6.0 1.03 0.23 -134.6 0.08 11.6 7.0 1.16 0.29 -99.3 0.14 10.86 8.0 1.35 0.35 -69.3 0.25 10.22 9.0 1.49 0.43 -47.9 0.39 9.48 10.0 1.62 0.54 -30.8 0.57 8.47 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test system. from these measurements a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diamet er via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. typical noise parameters, v ds = 2v, i ds = 15 ma figure 27. msg/mag and |s 21 | 2 vs. frequency at 2v, 15 ma. msg frequency (ghz) msg/mag and |s 21 | 2 (db) 020 10 515 40 35 30 25 20 15 10 5 0 -5 -10 |s 21 | 2
atf-55143 typical scattering parameters, v ds = 2v, i ds = 20 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. mag. ang. mag. ang. db 0.1 0.997 -7.5 23.23 14.512 174.2 0.006 85.5 0.722 -4.8 33.38 0.5 0.947 -36.2 22.66 13.582 151.8 0.026 69 0.679 -22.9 26.60 0.9 0.858 -61.3 21.59 12.011 132.8 0.041 56 0.618 -37.7 24.00 1.0 0.839 -67.2 21.29 11.602 128.6 0.044 53.2 0.599 -40.6 23.57 1.5 0.738 -92.4 19.74 9.703 110.4 0.056 42.1 0.523 -52.5 21.79 1.9 0.673 -109.4 18.59 8.5 98.3 0.063 35.5 0.474 -59.3 20.70 2.0 0.659 -113.5 18.32 8.238 95.5 0.065 34 0.463 -60.7 20.45 2.5 0.599 -132.6 17.07 7.135 82.4 0.071 27.5 0.411 -67.1 19.50 3.0 0.558 -150.6 15.95 6.272 70.5 0.077 21.8 0.361 -72.7 18.63 4.0 0.521 174.4 14.06 5.047 48.5 0.086 11.1 0.272 -85.6 17.27 5.0 0.531 142.8 12.40 4.171 28 0.093 0.7 0.205 -102.3 16.22 6.0 0.546 117.4 10.89 3.505 8.9 0.099 -9 0.166 -118.7 10.47 7.0 0.568 95.6 9.60 3.021 -9 0.104 -19.4 0.134 -136.5 9.34 8.0 0.588 74.4 8.42 2.637 -26.7 0.106 -29.8 0.086 -146.2 8.32 9.0 0.625 55.2 7.41 2.348 -44.1 0.115 -37.5 0.032 -171.2 7.99 10.0 0.699 36.8 6.43 2.097 -62.9 0.123 -50.7 0.077 71.3 8.33 11.0 0.754 20.9 5.21 1.823 -80.9 0.125 -63.2 0.165 46 8.19 12.0 0.791 6.9 4.08 1.60 -97.5 0.127 -75.1 0.235 27.6 7.98 13.0 0.818 -8.2 3.07 1.424 -114.7 0.128 -87.8 0.278 9.8 7.68 14.0 0.839 -23.8 2.07 1.269 -133.1 0.127 -101.4 0.340 -8.1 7.43 15.0 0.864 -38.1 0.65 1.078 -151 0.12 -114.9 0.440 -22.8 6.85 16.0 0.858 -51.1 -0.95 0.896 -167.3 0.113 -126.8 0.523 -33.4 5.58 17.0 0.873 -60.2 -2.30 0.768 178.6 0.111 -137.5 0.583 -45.6 5.27 18.0 0.917 -70.4 -3.41 0.675 163.4 0.106 -150.9 0.632 -59 6.28 freq f min g opt g opt r n/50 g a ghz db mag. ang. db 0.5 0.21 0.63 18.4 0.1 25.67 0.9 0.25 0.54 24.4 0.09 23.78 1.0 0.26 0.53 28.8 0.09 23.34 1.9 0.39 0.49 50.6 0.09 19.84 2.0 0.4 0.47 52.8 0.09 19.5 2.4 0.48 0.38 63.6 0.08 18.24 3.0 0.56 0.32 82 0.07 16.61 3.9 0.69 0.2 125.1 0.06 14.67 5.0 0.85 0.2 -167.2 0.06 12.97 5.8 0.98 0.24 -133.4 0.08 12.09 6.0 1.02 0.24 -128.4 0.09 10.89 7.0 1.16 0.3 -94.8 0.15 11.12 8.0 1.34 0.36 -66.4 0.25 10.45 9.0 1.49 0.45 -45.7 0.4 9.73 10.0 1.62 0.55 -28.6 0.6 8.8 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test system. from these measurements a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diamet er via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. typical noise parameters, v ds = 2v, i ds = 20 ma figure 28. msg/mag and |s 21 | 2 vs. frequency at 2v, 20 ma. msg frequency (ghz) msg/mag and |s 21 | 2 (db) 020 10 515 40 35 30 25 20 15 10 5 0 -5 -10 |s 21 | 2
atf-55143 typical scattering parameters, v ds = 2.7v, i ds = 10 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. mag. ang. mag. ang. db 0.1 0.998 -6.4 20.86 11.044 174.9 0.006 86.2 0.819 -3.9 32.65 0.5 0.963 -31.2 20.46 10.549 155 0.026 70.4 0.786 -19.1 26.08 0.9 0.896 -53.8 19.68 9.641 137.5 0.043 57.3 0.737 -32 23.51 1.0 0.881 -59.2 19.44 9.376 133.4 0.047 54.4 0.72 -34.7 23.00 1.5 0.794 -83 18.21 8.133 115.6 0.06 42.2 0.651 -46 21.32 1.9 0.732 -99.5 17.25 7.284 103.3 0.068 34.4 0.602 -52.9 20.30 2.0 0.718 -103.4 17.01 7.087 100.6 0.07 32.6 0.592 -54.5 20.05 2.5 0.655 -122.3 15.94 6.267 87.1 0.076 24.8 0.538 -61.3 19.16 3.0 0.608 -140.2 14.96 5.599 74.8 0.082 17.9 0.485 -67.3 18.34 4.0 0.553 -175.9 13.28 4.615 51.7 0.089 5.6 0.39 -80.1 17.15 5.0 0.548 150.9 11.74 3.862 30.2 0.092 -5.4 0.321 -94.7 16.23 6.0 0.556 123.9 10.30 3.272 10.3 0.094 -14.6 0.280 -109 10.63 7.0 0.573 100.9 9.04 2.83 -8.3 0.096 -23.9 0.247 -124.1 9.27 8.0 0.590 78.6 7.89 2.481 -26.5 0.096 -32.8 0.204 -134.3 8.16 9.0 0.625 58.4 6.94 2.224 -44.3 0.102 -38 0.152 -146.7 7.82 10.0 0.699 39.2 6.03 2.002 -63.6 0.112 -49.7 0.098 166.8 8.34 11.0 0.752 22.7 4.89 1.755 -82.3 0.115 -61.1 0.112 100 8.24 12.0 0.789 8.4 3.78 1.546 -99.8 0.12 -72.4 0.167 62.3 8.17 13.0 0.815 -7 2.78 1.378 -117.8 0.122 -84.7 0.211 37 7.93 14.0 0.838 -22.8 1.81 1.231 -137 0.124 -98.3 0.274 12.6 7.71 15.0 0.862 -37.2 0.37 1.044 -155.9 0.119 -111.8 0.387 -7.6 7.14 16.0 0.856 -50.5 -1.27 0.864 -173.3 0.113 -124.4 0.491 -21.5 5.78 17.0 0.872 -59.7 -2.73 0.730 171.9 0.111 -135.6 0.568 -35.9 5.49 18.0 0.915 -70 -3.96 0.634 156 0.107 -149.4 0.628 -51.2 6.84 freq f min g opt g opt r n/50 g a ghz db mag. ang. db 0.5 0.2 0.64 19 0.12 25.29 0.9 0.26 0.59 22.7 0.12 23.24 1.0 0.27 0.54 26 0.12 22.76 1.9 0.39 0.54 48.3 0.11 19.01 2.0 0.4 0.54 49.9 0.11 18.66 2.4 0.48 0.45 59.8 0.1 17.35 3.0 0.57 0.39 75.6 0.09 15.69 3.9 0.72 0.26 108.7 0.07 13.79 5.0 0.88 0.2 167.5 0.06 12.26 5.8 1.02 0.22 -154.8 0.07 11.52 6.0 1.04 0.21 -147.8 0.08 11.37 7.0 1.19 0.26 -107.9 0.13 10.76 8.0 1.39 0.32 -75 0.23 10.2 9.0 1.54 0.41 -51.6 0.36 9.48 10.0 1.65 0.53 -33.6 0.54 8.38 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test system. from these measurements a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diamet er via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. typical noise parameters, v ds = 2.7v, i ds = 10 ma figure 29. msg/mag and |s 21 | 2 vs. frequency at 2.7v, 10 ma. msg |s 21 | 2 frequency (ghz) msg/mag and |s 21 | 2 (db) 020 10 515 35 30 25 20 15 10 5 0 -5 -10
atf-55143 typical scattering parameters, v ds = 2.7v, i ds = 20 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. mag. ang. mag. ang. db 0.1 0.997 -7.4 23.29 14.603 174.2 0.005 85.8 0.755 -4.4 34.65 0.5 0.947 -35.8 22.72 13.682 152 0.024 69.2 0.713 -21.1 27.56 0.9 0.860 -60.8 21.67 12.116 133 0.038 56.2 0.652 -34.6 25.04 1.0 0.840 -66.6 21.37 11.705 128.8 0.041 53.4 0.633 -37.3 24.56 1.5 0.739 -91.7 19.83 9.802 110.6 0.051 42.4 0.56 -48 22.84 1.9 0.672 -108.6 18.68 8.587 98.5 0.057 36 0.513 -54 21.78 2.0 0.658 -112.7 18.41 8.323 95.8 0.059 34.5 0.503 -55.3 21.49 2.5 0.597 -131.7 17.16 7.21 82.7 0.065 28.4 0.455 -60.9 20.45 3.0 0.554 -149.7 16.04 6.341 70.9 0.069 23 0.409 -65.7 19.63 4.0 0.515 175.4 14.17 5.114 49.1 0.078 13.3 0.328 -76.7 18.17 5.0 0.523 143.7 12.55 4.239 28.6 0.084 3.7 0.267 -90.7 17.03 6.0 0.538 118.2 11.06 3.572 9.6 0.09 -5 0.232 -104.8 10.28 7.0 0.559 96.4 9.78 3.084 -8.4 0.095 -14.7 0.201 -119.6 9.37 8.0 0.579 75.2 8.62 2.699 -25.9 0.098 -24.2 0.162 -127.4 8.50 9.0 0.615 56 7.65 2.413 -43.3 0.107 -31 0.113 -136.5 8.31 10.0 0.690 37.7 6.73 2.171 -62.1 0.117 -44 0.055 160.9 8.81 11.0 0.748 21.7 5.57 1.9 -80.3 0.122 -56.4 0.096 75.9 8.85 12.0 0.787 7.9 4.48 1.675 -97.3 0.126 -68.5 0.164 45.5 8.75 13.0 0.816 -7.3 3.5 1.496 -114.9 0.128 -81.4 0.210 23.7 8.62 14.0 0.841 -22.9 2.55 1.341 -133.5 0.13 -95.1 0.277 3 8.48 15.0 0.867 -37.3 1.15 1.142 -152.1 0.124 -109.2 0.386 -14.3 7.84 16.0 0.862 -50.5 -0.44 0.95 -169 0.118 -121.9 0.483 -26.3 6.39 17.0 0.877 -59.7 -1.83 0.81 176.3 0.116 -133.3 0.555 -39.5 6.08 18.0 0.921 -70 -2.99 0.709 160.6 0.111 -147.1 0.612 -53.9 7.60 freq f min g opt g opt r n/50 g a ghz db mag. ang. db 0.5 0.20 0.65 17.6 0.1 25.79 0.9 0.25 0.55 23.6 0.1 23.9 1.0 0.26 0.53 28.3 0.1 23.45 1.9 0.39 0.49 49 0.09 19.94 2.0 0.4 0.48 51.5 0.09 19.6 2.4 0.47 0.38 62 0.08 18.34 3.0 0.56 0.32 79.6 0.07 16.71 3.9 0.69 0.19 120 0.06 14.8 5.0 0.85 0.18 -168.8 0.06 13.14 5.8 0.98 0.22 -135.4 0.08 12.3 6.0 1.01 0.22 -128.7 0.09 12.12 7.0 1.15 0.29 -94.6 0.15 11.38 8.0 1.32 0.35 -66.7 0.25 10.74 9.0 1.47 0.44 -45.7 0.38 10.04 10.0 1.58 0.54 -28.6 0.57 9.1 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test system. from these measurements a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diamet er via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. typical noise parameters, v ds = 2.7v, i ds = 20 ma figure 30. msg/mag and |s 21 | 2 vs. frequency at 2.7v, 20 ma. msg |s 21 | 2 frequency (ghz) msg/mag and |s 21 | 2 (db) 020 10 515 40 35 30 25 20 15 10 5 0 -5
atf-55143 typical scattering parameters, v ds = 3v, i ds = 20 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. mag. ang. mag. ang. db 0.1 0.998 -7.4 23.34 14.697 174.2 0.005 85.1 0.763 -4.3 34.68 0.5 0.947 -35.9 22.77 13.762 151.9 0.023 69.2 0.721 -20.6 27.77 0.9 0.859 -60.9 21.71 12.178 132.9 0.037 56.2 0.661 -33.8 25.17 1.0 0.839 -66.7 21.41 11.764 128.7 0.039 53.5 0.642 -36.3 24.79 1.5 0.738 -91.8 19.86 9.844 110.5 0.050 42.5 0.570 -46.7 22.94 1.9 0.671 -108.7 18.71 8.621 98.5 0.055 36.2 0.524 -52.5 21.95 2.0 0.657 -112.7 18.44 8.354 95.7 0.057 34.8 0.514 -53.7 21.66 2.5 0.595 -131.7 17.19 7.233 82.7 0.062 28.7 0.468 -59.1 20.67 3.0 0.552 -149.8 16.07 6.36 70.9 0.067 23.5 0.423 -63.8 19.77 4.0 0.513 175.4 14.2 5.13 49.1 0.075 14.2 0.345 -74.3 18.35 5.0 0.521 143.8 12.58 4.256 28.7 0.081 4.9 0.287 -87.7 11.97 6.0 0.536 118.3 11.1 3.588 9.7 0.087 -3.5 0.254 -101.6 10.25 7.0 0.557 96.5 9.83 3.1 -8.2 0.092 -12.9 0.224 -116.1 9.37 8.0 0.577 75.3 8.67 2.715 -25.8 0.095 -22.1 0.187 -124.3 8.51 9.0 0.613 56.2 7.71 2.43 -43.1 0.105 -28.7 0.140 -133.5 8.39 10.0 0.687 38 6.81 2.192 -61.8 0.116 -41.7 0.075 -178.8 8.96 11.0 0.746 22 5.67 1.922 -80.2 0.121 -54 0.084 94 9.02 12.0 0.787 8.1 4.59 1.697 -97.2 0.126 -66.1 0.145 54.4 9.06 13.0 0.816 -7 3.62 1.516 -114.9 0.128 -79.1 0.191 30 8.93 14.0 0.842 -22.6 2.67 1.36 -133.6 0.131 -93 0.256 8 8.92 15.0 0.869 -37 1.3 1.161 -152.3 0.126 -107.2 0.369 -10.9 8.24 16.0 0.863 -50.2 -0.29 0.967 -169.6 0.1200 -120.2 0.471 -23.5 6.61 17.0 0.879 -59.6 -1.7 0.822 175.6 0.118 -131.9 0.548 -37.3 6.30 18.0 0.924 -69.8 -2.87 0.719 159.7 0.113 -145.9 0.608 -52.2 8.42 freq f min g opt g opt r n/50 g a ghz db mag. ang. db 0.5 0.18 0.63 17.6 0.1 25.89 0.9 0.24 0.54 23.4 0.1 23.98 1.0 0.25 0.53 27.9 0.1 23.53 1.9 0.39 0.48 48.4 0.09 20 2.0 0.4 0.47 51.6 0.09 19.66 2.4 0.47 0.39 61.9 0.08 18.4 3.0 0.56 0.32 78.7 0.07 16.77 3.9 0.68 0.19 119.8 0.06 14.85 5.0 0.85 0.19 -170.4 0.06 13.21 5.8 0.97 0.22 -135.1 0.08 12.37 6.0 1.01 0.22 -128.4 0.09 12.2 7.0 1.14 0.28 -94.7 0.14 11.47 8.0 1.31 0.35 -66.8 0.25 10.84 9.0 1.47 0.44 -45.6 0.38 10.15 10.0 1.59 0.54 -28.9 0.57 9.22 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test system. from these measurements a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diamet er via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. typical noise parameters, v ds = 3v, i ds = 20 ma figure 31. msg/mag and |s 21 | 2 vs. frequency at 3v, 20 ma. msg |s 21 | 2 frequency (ghz) msg/mag and |s 21 | 2 (db) 020 10 515 40 35 30 25 20 15 10 5 0 -5
atf-55143 typical scattering parameters, v ds = 3v, i ds = 30 ma freq. s 11 s 21 s 12 s 22 msg/mag ghz mag. ang. db mag. ang. mag. ang. mag. ang. db 0.1 0.996 -7.9 24.3 16.407 173.9 0.005 85.6 0.729 -4.5 35.16 0.5 0.937 -38.1 23.64 15.205 150.4 0.021 68.8 0.683 -21.2 28.60 0.9 0.840 -64.1 22.44 13.246 130.9 0.034 56.1 0.620 -34.3 25.91 1.0 0.819 -70.1 22.11 12.753 126.6 0.036 53.5 0.601 -36.8 25.49 1.5 0.712 -95.7 20.43 10.507 108.4 0.046 43.4 0.531 -46.5 23.59 1.9 0.646 -112.8 19.2 9.117 96.4 0.051 37.7 0.488 -51.8 22.52 2.0 0.631 -116.8 18.91 8.823 93.7 0.052 36.6 0.479 -52.9 22.30 2.5 0.571 -135.8 17.59 7.578 80.9 0.057 31.3 0.437 -57.7 21.24 3.0 0.531 -153.9 16.42 6.625 69.4 0.062 26.6 0.398 -61.8 20.29 4.0 0.499 171.8 14.49 5.303 48.1 0.071 18.1 0.328 -71.6 18.73 5.0 0.512 140.9 12.84 4.386 28.1 0.078 9.2 0.273 -84.7 11.26 6.0 0.529 116 11.35 3.693 9.4 0.085 0.7 0.242 -98.5 10.12 7.0 0.552 94.7 10.07 3.188 -8.3 0.092 -9 0.214 -112.9 9.45 8.0 0.573 73.9 8.91 2.79 -25.6 0.096 -18.6 0.179 -120.5 8.67 9.0 0.609 55.1 7.94 2.496 -42.7 0.107 -25.8 0.134 -128.4 8.60 10.0 0.684 37.3 7.05 2.251 -61.3 0.118 -39.2 0.064 -173.3 9.20 11.0 0.744 21.6 5.91 1.975 -79.5 0.123 -51.9 0.075 87.5 9.28 12.0 0.786 7.9 4.83 1.744 -96.4 0.128 -64.3 0.141 49.7 9.36 13.0 0.816 -7.2 3.86 1.56 -113.9 0.131 -77.5 0.187 26.4 9.40 14.0 0.842 -22.8 2.93 1.401 -132.6 0.133 -91.7 0.250 5.1 9.38 15.0 0.870 -37.1 1.56 1.197 -151.1 0.128 -106 0.367 -12.6 8.55 16.0 0.866 -50.3 -0.01 0.998 -168.2 0.122 -119.1 0.467 -24.8 6.86 17.0 0.882 -59.7 -1.4 0.851 177 0.12 -130.8 0.543 -38.2 6.56 18.0 0.927 -69.9 -2.55 0.746 161.2 0.115 -144.8 0.602 -52.8 8.12 freq f min g opt g opt r n/50 g a ghz db mag. ang. db 0.5 0.19 0.59 18.4 0.09 26.27 0.9 0.25 0.5 25.5 0.09 24.41 1.0 0.26 0.52 30.7 0.09 23.98 1.9 0.41 0.44 50.6 0.08 20.51 2.0 0.42 0.43 54.5 0.08 20.18 2.4 0.49 0.34 65.1 0.08 18.92 3.0 0.59 0.27 84.7 0.07 17.28 3.9 0.72 0.17 132.6 0.06 15.33 5.0 0.88 0.19 -156.2 0.06 13.61 5.8 1.02 0.24 -125.3 0.09 12.71 6.0 1.06 0.25 -118.8 0.1 12.52 7.0 1.2 0.32 -88.8 0.17 11.73 8.0 1.37 0.39 -62.7 0.28 11.08 9.0 1.53 0.47 -43.1 0.43 10.41 10.0 1.66 0.57 -27 0.65 9.58 notes: 1. f min values at 2 ghz and higher are based on measurements while the f mins below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test system. from these measurements a true f min is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. the parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diamet er via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. typical noise parameters, v ds = 3v, i ds = 30 ma figure 32. msg/mag and |s 21 | 2 vs. frequency at 3v, 30 ma. msg |s 21 | 2 frequency (ghz) msg/mag and |s 21 | 2 (db) 020 10 515 40 35 30 25 20 15 10 5 0 -5
atf-55143 applications information introduction agilent technologies? atf-55143 is a low noise enhancement mode phemt designed for use in low cost commercial applications in the vhf through 6 ghz frequency range. as opposed to a typical depletion mode phemt where the gate must be made negative with operation, an enhancement mode biasing an enhancement mode phemt is much like biasing the instead of a 0.7v base to emitter voltage, the atf-55143 enhance- ment mode phemt requires about a 0.47v potential between the gate and source for a nominal drain current of 10 ma. matching networks the techniques for im pedance matching an enhancement mode device are very similar to those for matching a depletion mode the method of supplying gate bias. s and noise parameters for various bias conditions are listed shown in figure 1 shows a typical lna circuit normally used for 900 and 1900 mhz applications (consult the agilent technologies website for application notes covering specific applications). networks consisting of l1/c1 and l4/c4 pr ovide the appropriate match for noise figure, gain, s11 and s22. the high pass structure from the standpoint of improving out-of-band rejection. input c1 c2 c3 l1 r4 r1 r2 vdd r3 l2 l3 l4 q1 zo zo c4 c5 c6 output r5 figure 1. typical atf-55143 lna with passive biasing. capacitors c2 and c5 pr ovide a low impedance in-band rf bypass for the matching net- works. resistors r3 and r4 provide a very important low frequency termination for the device. the resistive termination improves low frequency stability. the low frequency rf bypass for resistors r3 and r4. their value should be chosen carefully as c3 and c6 also provide a termina- tion for low frequency mixing products. these mixing products are as a result of two or more in- band signals mixing and produc- ing third order in-band distortion difference mixing products are terminated by c3 and c6. for best suppression of third order distortion products based on the cdma 1.25 mhz signal spacing, c3 and c6 should be 0.1 m f in value. smaller values of capaci- tance will not suppress the generation of the 1.25 mhz difference signal and as a result will show up as poorer two tone ip3 results. bias networks one of the major advantages of the enhancement mode technol- ogy is that it allows the designer to be able to dc ground the source leads and then merely apply a positive voltage on the gate to set the desired amount of quiescent drain cur rent i d . whereas a depletion mode phemt pulls maximum drain current when v gs = 0v, an en- hancement mode phemt pulls only a small amount of leakage current when v gs =0 v. only when v gs is increased above v th , the device threshold voltage, will drain cur rent star t to flow. at a v ds of 2.7v and a nominal v gs of 0.47v, the drain cur rent i d will be sheet suggests a minimum and maximum v gs over which the desired amount of drain current will be achieved. it is also impor- tant to note that if the gate terminal is left open circuited, the device will pull some amount of drain current due to leakage current creating a voltage differ- ential between the gate and source terminals. passive biasing passive biasing of the atf-55143 is accomplished by the use of a voltage divider consisting of r1 and r2. the voltage for the divider is derived from the drain voltage which provides a form of voltage feedback through the use of r3 to help keep drain current constant. resistor r5 (approxi- mately 10 k w ) is added to limit the gate current of enhancement mode devices such as the atf-55143. this is especially important when the device is driven to p 1db or p sat . resistor r3 is calculated based on desired v ds , i ds and available power supply voltage. r3 = v dd ?v ds (1) p i ds + i bb v dd is the power supply voltage. v ds is the device drain to source voltage. i ds is the desired drain current. i bb is the current flowing through divider network. respect to the source for proper phemt requires that the gate be made more positive than the source for normal operation. therefore a negative power supply voltage is not required for an enhancement mode device. typical bipolar junction transistor. device. the only difference is in in this data sheet. the circuit high pass impedance matching also provides low frequency gain reduction which can be beneficial capacitors c3 and c6 provide products. the low frequency or approximately 10 ma. the data the r1/r2 resistor voltage
the values of resistors r1 and r2 are calculated with the following formulas r1 = v gs (2) p i bb r2 = (v ds ?v gs ) r1 (3) p v gs example circuit v dd = 3v v ds = 2.7v i ds = 10 ma v gs = 0.47v choose i bb to be at least 10x the normal expected gate leakage current. i bb was conservatively chosen to be 0.5 ma for this example. using equations (1), (2), and (3) the resistors are calcu- lated as follows r1 = 940 w r2 = 4460 w r3 = 28.6 w active biasing active biasing provides a means of keeping the quiescent bias point constant over temperature and constant over lot to lot variations in device dc perfor- mance. the advantage of the active biasing of an enhancement mode phemt versus a depletion mode phemt is that a negative power source is not required. the techniques of active biasing an enhancement mode device are very similar to those used to bias input c1 c2 c3 c7 l1 r5 r6 r7 r3 r2 r1 q2 vdd r4 l2 l3 l4 q1 zo zo c4 c5 c6 output figure 2. typical atf-55143 lna with activebiasing. constant voltage source at the base of a pnp transistor at q2. the constant voltage at the base of q2 is raised by 0.7 volts at the emitter. the constant emitter voltage plus the regulated v dd supply are present across resis- tor r3. constant voltage across r3 provides a constant current resistors r1 and r2 are used to set the desired vds. the com- bined series value of these resistors also sets the amount of extra current consumed by the bias network. the equations that describe the circuit? operation are as follows. v e = v ds + (i ds r4) (1) r3 = v dd ?v e (2) p i ds v b = v e ?v be (3) v b = r1 v dd (4) p r1 + r2 v dd = i bb (r1 + r2) (5) rearranging equation (4) provides the following formula r2 = r 1 (v dd ?v b ) (4a) p v b and rearranging equation (5) provides the following formula r1 = v dd (5a) 9 i bb ( 1 + v dd ?v b ) p v b v dd = 3v i bb = 0.5 ma v ds = 2.7v i ds = 10 ma r4 = 10 w v be = 0.7v equation (1) calculates the required voltage at the emitter of the pnp transistor based on desired v ds and i ds through resistor r4 to be 2.8v. equation (2) calculates the value of resis- tor r3 which determines the drain current i ds . in the example r3 =20 w . equation (3) calculates the voltage required at the junction of resistors r1 and r2. this voltage plus the step-up of the base emitter junction deter- mines the regulated v ds . equa- tions (4) and (5) are solved simultaneously to determine the value of resistors r1 and r2. in the example r1=4200 w and r2 =1800 w . r7 is chosen to be 1k w . this resistor keeps a small amount of current flowing through q2 to help maintain bias stability. r6 is chosen to be 10k w . this value of resistance is necessary to limit q1 gate current in the presence of high rf drive levels (especially when q1 is driven to the p 1db gain a low frequency bypass to keep noise from q2 effecting the operation of q1. c7 is typically 0.1 m f. a bipolar junction transistor. an active bias scheme is shown in figure 2. r1 and r2 provide a supply for the drain current. example circuit compression point). c7 provides
atf-55143 die model nfet=yes pfet=no vto=0.3 beta=0.444 lambda=72e-3 alpha=13 tau= tnom=16.85 idstc= ucrit=-0.72 vgexp=1.91 gamds=1e-4 vtotc= betatce= rgs=0.5 ohm rf= gscap=2 cgs=0.6193 pf cgd=0.1435 pf gdcap=2 fc=0.65 rgd=0.5 ohm rd=2.025 ohm rg=1.7 ohm rs=0.675 ohm ld= lg=0.094 nh ls= cds=0.100 pf rc=390 ohm crf=0.1 f gsfwd= gsrev= gdfwd= gdrev= r1= r2= vbi=0.95 vbr= vjr= is= ir= imax= xti= eg= n= fnc=1 mhz r=0.08 p=0.2 c=0.1 taumdl=no wvgfwd= wbvgs= wbvgd= wbvds= wldsmax= wpmax= allparams= advanced_curtice2_model mesfetm1 gate source inside package port g num=1 c c1 c=0.143 pf port s1 num=2 source drain port s2 num=4 port d num=3 l l6 l=0.205 nh r=0.001 c c2 c=0.115 pf l l7 l=0.778 nh r=0.001 msub tlinp tl4 z=z1 ohm l=15 mil k=1 tlinp tl10 z=z1 ohm l=15 mil k=1 tlinp tl3 z=z2 ohm l=25 mil k=k tlinp tl9 z=z2 ohm l=10.0 mil k=k var var1 k=5 z2=85 z1=30 var egn tlinp tl1 z=z2/2 ohm l=20 0 mil k=k tlinp tl2 z=z2/2 ohm l=20 0 mil k=k tlinp tl8 z=z1 ohm l=15.0 mil k=1 tlinp tl7 z=z2/2 ohm l=5.0 mil k=k tlinp tl5 z=z2 ohm l=26.0 mil k=k tlinp tl6 z=z1 ohm l=15.0 mil k=1 l l1 l=0.621 nh r=0.001 l l4 l=0.238 nh r=0.001 gaasfet fet1 mode1=mesfetm1 mode=nonlinear msub msub1 h=25.0 mil er=9.6 mur=1 cond=1.0e+50 hu=3.9e+034 mil t=0.15 mil tand=0 rough=0 mil atf-55143 ads package model
figure 3. adding vias to the atf-55143 non-linear model for comparison to measured s and noise parameters. designing with s and noise parameters and the non-linear model the non-linear model describing the atf-55143 includes both the die and associat ed package model. the package model includes the effect of the pins but does not include the effect of the additional source inductance associated with grounding the source leads through the printed circuit board. the device s and noise parameters do include the effect of 0.020 inch thickness printed circuit board vias. when between the measured s param- linear model, be sure to include the effect of the printed circuit board to get an accurate compari- son. this is shown schematically in figure 3. for further information the information presented here is atf-55143 enhancement mode phemt. more detailed application circuit information is available from agilent technologies. consult the web page or your local agilent technologies sales represent ative. drain via2 v1 d=20.0 mil h=25.0 mil t=0.15 mil rho=1.0 w=40.0 mil via2 v2 d=20.0 mil h=25.0 mil t=0.15 mil rho=1.0 w=40.0 mil via2 v4 d=20.0 mil h=25.0 mil t=0.15 mil rho=1.0 w=40.0 mil source gate source atf-55143 msub msub1 h=25.0 mil er=9.6 mur=1 cond=1.0e+50 hu=3.9e+034 mil t=0.15 mil tand=0 rough=0 mil msub via2 v3 d=20.0 mil h=25.0 mil t=0.15 mil rho=1.0 w=40.0 mil comparing simulation results eters and the simulated non- an introduction to the use of the
noise parameter applications information f min values at 2 ghz and higher are based on measurements while t he f mins below 2 ghz ha ve been extrapolated. the f min values are based on a set of 16 noise f igure measurements f min is calculated. f min repre- sents the true minimum noise figure of the device when the device is presented wit h an impedance matching network that transforms the source impedance, typically 50 w , to an impedance represented by the reflection coefficient g o . the designer must design a matching network that will present g o to the device with minimal associ- ated circuit losses. the noise figure of the completed amplifier is equal to the noise f igure of the device plus the losses of the matching netw ork preceding the device. the noise figure of the device is equal to f min only when the device is present ed with g o . if the ref lection coefficient of the g o , then the noise figure of the device will be g reater than f min based on t he following equation. nf = f min + 4 r n | g s ? g o | 2 zo (|1 + g o | 2 )(1 - | g s | 2 ) where r n /z o is the normalized noise resistance, g o is the opti- mum reflection coefficient required to produce f min and g s is the reflection coefficient of the source impedance actually presented to the device. the losses of the matching networks are non-zero and they will also add to the noise figure of the device creating a higher amplifier noise figure. the losses of the matching networks are related to the q of the components and associated printed circuit board loss. g o is typically fairly low at higher frequencies and increases as frequency is lowered. larger gate width devices will typically have a lower g o as compared to narrower gate width devices. typically for fets, the higher g o usually infers that an impedance much higher than 50 w is required for the device to produce f min . at vhf frequencies and even lower l band frequencies, the required impedance can be in the vicinity of several thousand ohms. match- ing to such a high impedance requires very hi-q components in order to minimize circuit losses. as an example at 900 mhz, when airwound coils (q > 100) are used for matching networks, the loss can still be up to 0.25 db which will add directly to the noise figure of the device. using multi- layer molded inductors with qs in the 30 to 50 range results in additional loss over the airwound coil. losses as high as 0.5 db or greater add to the typical 0.15 db f min of the device creating an amplifier noise figure of nearly 0.65 db. a discussion concerning calculated and measured circuit losses and their effect on ampli- fier noise figure is covered in agilent technologies application 1085. made at 16 different impedances using an atn np5 test system. from these measurements, a true matching network is other than
e d a a1 b typ e e1 1.30 (0.051) bsc 1.15 (.045) bsc q h c typ l dimensions are in millimeters (inches) dimensions min. 0.80 (0.031) 0 (0) 0.25 (0.010) 0.10 (0.004) 1.90 (0.075) 2.00 (0.079) 0.55 (0.022) 0.450 typ (0.018) 1.15 (0.045) 0.10 (0.004) 0 max. 1.00 (0.039) 0.10 (0.004) 0.35 (0.014) 0.20 (0.008) 2.10 (0.083) 2.20 (0.087) 0.65 (0.025) 1.35 (0.053) 0.35 (0.014) 10 symbol a a1 b c d e e h e1 l q 1.15 (.045) ref 1.30 (.051) ref 1.30 (.051) 2.60 (.102) 0.55 (.021) typ 0.85 (.033) package dimensions outline 43 sot-343 (sc70 4-lead) ordering information part number no. of devices container ATF-55143-TR1 3000 7?reel atf-55143-tr2 10000 13?reel atf-55143-blk 100 antistatic bag
www.semiconductor.agilent.com data subject to change. copyright ?2001 agilent technologies, inc. obsoletes 5988-3190en july 18, 2001 5988-3587en user feed direction cover tape carrier tape reel end view 8 mm 4 mm top view p p 0 p 2 f w c d 1 d e a 0 8 max. t 1 (carrier tape thickness) t t (cover tape thickness) 5 max. b 0 k 0 description symbol size (mm) size (inches) length width depth pitch bottom hole diameter a 0 b 0 k 0 p d 1 2.24 0.10 2.34 0.10 1.22 0.10 4.00 0.10 1.00 + 0.25 0.088 0.004 0.092 0.004 0.048 0.004 0.157 0.004 0.039 + 0.010 cavity diameter pitch position d p 0 e 1.55 0.05 4.00 0.10 1.75 0.10 0.061 0.002 0.157 0.004 0.069 0.004 perforation width thickness w t 1 8.00 0.30 0.255 0.013 0.315 0.012 0.010 0.0005 carrier tape cavity to perforation (width direction) cavity to perforation (length direction) f p 2 3.50 0.05 2.00 0.05 0.138 0.002 0.079 0.002 distance width tape thickness c t t 5.4 0.10 0.062 0.001 0.205 0.004 0.0025 0.00004 cover tape device orientation tape dimensions for outline 4t
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